908E621_08 Datasheet, PDF (10/65 Pages) Freescale Semiconductor, Inc – Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0V ≤ V_SUP ≤ 16V, -40°C ≤ T_J ≤ 125°C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER
LIN Transceiver Output Voltage
Recessive State, TXD HIGH, I_OUT = 1.0μA
Dominant State, TXD LOW, 500Ω External Pullup Resistor
V _{LIN_REC}
V_SUP -1
—
V _{LIN_DOM}
—
—
Normal Mode Pullup Resistor to VSUP
Stop, Sleep Mode Pullup Current Source
Output Current Shutdown Threshold
R _PU
I_PU
I_BLIM
20
30
—
20
100
230
Output Current Shutdown Timing
I_BLS
5.0
–
Leakage Current to GND
V_SUP Disconnected, V_BUS at 18V
I_BUS
–
1.0
Recessive state, 8.0V ≤ V_SUP ≤ 18V, 8.0V ≤ V_BUS ≤ 18V, V_BUS ≥ V_SUP I_BUS-PAS-REC
0.0
3.0
GND Disconnected, V_GND = V_SUP, V_BUS at -18V
I_BUS-NOGND
-1.0
–
LIN Receiver
Receiver Threshold Dominant
Receiver Threshold Recessive
Receiver Threshold Center
Receiver Threshold Hysteresis
V_{BUS_DOM}
–
–
V_{BUS_REC}
0.6
–
V_{BUS_CNT}
0.475
0.5
V_{BUS_HYS}
–
–
V
—
1.4
47
kΩ
—
μA
280
mA
40
µs
10
20
1.0
0.4
–
0.525
0.175
µA
µA
mA
VSUP
908E621
10
Analog Integrated Circuit Device Data
Freescale Semiconductor