LM3S316 Datasheet, PDF (403/421 Pages) List of Unclassifed Manufacturers – Microcontroller

LM3S316 Data Sheet
20.1.5
20.2
20.2.1
Flash Memory Characteristics
Table 20-5. Flash Memory Characteristics
Parameter Parameter Name
Min
PE_CYC
Number of guaranteed program/erase
cycles^a before failure
10,000
T_RET
Data retention at average operating
10
temperature of 85°C
T_PROG
Word program time
20
T_ERASE
Page erase time
20
T_ME
Mass erase time
200
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
Nom
-
-
-
-
-
Max
Unit
-
cycles
-
years
-
µs
-
ms
-
ms
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 20-1. Load Conditions
pin
C_L = 50 pF
GND
20.2.2 Clocks
Table 20-6. Phase Locked Loop (PLL) Characteristics
Parameter
Parameter Name
Min
Nom
Max
Unit
f_{REF_CRYSTAL}
f_{REF_EXT}
f_PLL
Crystal reference^a
3.579545
-
External clock reference^a 3.579545
-
PLL frequency^b
-
200
8.192
8.192
-
MHz
MHz
MHz
T_READY
PLL lock time
-
-
0.5
ms
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock
Configuration (RCC) register (see page 86).
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
April 27, 2007
403
Preliminary