SI8421AD Datasheet, PDF (18/37 Pages) List of Unclassifed Manufacturers – LOW-POWER, SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS

Si8410/20/21 (5 kV)
Si8422/23 (2.5 & 5 kV)
Table 9. IEC 60747-5-5 Insulation Characteristics for Si84xxxx*
Parameter
Symbol
Test Condition
Characteristic
WB
SOIC-16
NB SOIC-8
Unit
Maximum Working Insulation
Voltage
Input to Output Test Voltage
V_IORM
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
891
1671
560
Vpeak
1050
Transient Overvoltage
Pollution Degree
(DIN VDE 0110, Table 1)
V_IOTM
t = 60 sec
6000
2
4000
2
Vpeak
Insulation Resistance at T_S,
V_IO = 500 V
R_S
>10⁹
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values¹
Parameter
Symbol
Test Condition
Max
WB SOIC- NB SOIC- ^Unit
16
8
Case Temperature
T_S
150
150
°C
Safety Input, Output, or
Supply Current
I_S
_JA = 140 °C/W (NB SOIC-8), 100 °C
220
(WB SOIC-16),
V_I = 5.5 V, T_J = 150 °C, T_A = 25 °C
Device Power Dissipation²
P_D
150
160
mA
150
mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 2 and 3.
2. The Si84xx is tested with VDD1 = VDD2 = 5.5 V, T_J = 150 ºC, C_L = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
18
Rev. 1.3