SI8421AD Datasheet, PDF (17/37 Pages) List of Unclassifed Manufacturers – LOW-POWER, SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS

Si8410/20/21 (5 kV)
Si8422/23 (2.5 & 5 kV)
Table 7. Insulation and Safety-Related Specifications
Parameter
Symbol
Value
Test Condition
WB
NB
Unit
SOIC-16 SOIC-8
Nominal Air Gap (Clearance)¹
L(IO1)
8.0 min 4.9 min mm
Nominal External Tracking (Creepage)¹
L(IO2)
8.0 min 4.01 min mm
Minimum Internal Gap (Internal Clearance)
0.014 0.008 mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
V_RMS
Erosion Depth
ED
0.019 0.040 mm
Resistance (Input-Output)²
R_IO
10^1,2
10^1,2

Capacitance (Input-Output)²
C_IO
f = 1 MHz
2.0
1.0
pF
Input Capacitance³
C_I
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “7. Package Outline:
16-Pin Wide Body SOIC”, “9. Package Outline: 8-Pin Narrow Body SOIC”. VDE certifies the clearance and creepage
limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB SOIC-8 package. UL does
not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and
creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 5) Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Conditions
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
NB SOIC8
WB SOIC 16
I
I
I-IV
I-IV
I-III
I-IV
I-II
I-III
I-II
I-III
Rev. 1.3
17