SI8421AD Datasheet, PDF (15/37 Pages) List of Unclassifed Manufacturers – LOW-POWER, SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS

Si8410/20/21 (5 kV)
Si8422/23 (2.5 & 5 kV)
Table 3. Electrical Characteristics¹ (Continued)
(V_DD1 = 2.70 V, V_DD2 = 2.70 V, T_A = –40 to 125 °C)
Parameter
Symbol Test Condition
Min
Typ
Max Unit
Minimum Pulse Width
—
—
6.0
ns
Propagation Delay
t_PHL, t_PLH See Figure 1
4.0
8.0
11
ns
Pulse Width Distortion
PWD
See Figure 1
—
1.5
3.0
ns
|t_PLH - t_PHL|
Propagation Delay Skew³
t_PSK(P-P)
—
2.0
3.0
ns
Channel-Channel Skew
t_PSK
—
0.5
1.5
ns
All Models
Output Rise Time
Output Fall Time
t_r
C_L = 15 pF
t_f
C_L = 15 pF
—
2.0
4.0
ns
—
2.0
4.0
ns
Peak Eye Diagram Jitter
t_JIT(PK)
See Figure 6
—
350
—
ps
Common Mode Transient
Immunity
CMTI
V_I = V_DD or 0 V
20
45
— kV/µs
Start-up Time⁴
t_SU
—
15
40
µs
Notes:
1. Specifications in this table are also valid at VDD1 = 2.6 V and VDD2 = 2.6 V when the operating temperature range is
constrained to T_A = 0 to 85 °C.
2. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
3. t_PSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
4. Start-up time is the time period from the application of power to valid data at the output.
Table 4. Absolute Maximum Ratings¹
Parameter
Storage Temperature²
Operating Temperature
Junction Temperature
Supply Voltage
Input Voltage
Output Voltage
Output Current Drive Channel
Lead Solder Temperature (10 s)
Symbol
T_STG
T_A
T_J
V_DD1, V_DD2
V_I
V_O
I_O
Min
–65
–40
—
–0.5
–0.5
–0.5
—
—
Typ
Max Unit
—
150
C°
—
125
C°
—
150
°C
—
6.0
V
— V_DD + 0.5 V
— V_DD + 0.5 V
—
10
mA
—
260
C°
Maximum Isolation Voltage (1 s) NB SOIC-8
—
—
4500 V_RMS
Maximum Isolation Voltage (1 s) WB SOIC-16
—
—
6500 V_RMS
Notes:
1. Permanent device damage may occur if the above absolute maximum ratings are exceeded. Functional operation
should be restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
Rev. 1.3
15