LM3S2965_0711 Datasheet, PDF (537/574 Pages) List of Unclassifed Manufacturers – Microcontroller

LM3S2965 Microcontroller
23.1.5
23.2
23.2.1
Flash Memory Characteristics
Table 23-5. Flash Memory Characteristics
Parameter Parameter Name
Min Nom Max Unit
PE_CYC Number of guaranteed program/erase cycles before failure^a 10,000 100,000 - cycles
T_RET Data retention at average operating temperature of 85˚C
10
-
- years
T_PROG Word program time
20
-
- µs
T_ERASE Page erase time
20
-
- ms
T_ME Mass erase time
200
-
- ms
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 23-1. Load Conditions
pin
C_L = 50 pF
GND
23.2.2
Clocks
Table 23-6. Phase Locked Loop (PLL) Characteristics
Parameter Parameter Name
Min Nom Max Unit
f_{ref_crystal} Crystal reference^a
3.579545 - 8.192 MHz
f_{ref_ext}
f_pll
External clock reference^a 3.579545 - 8.192 MHz
PLL frequency^b
-
400 - MHz
T_READY PLL lock time
-
- 0.5 ms
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
(RCC) register.
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
Table 23-7. Clock Characteristics
Parameter
f_IOSC
f_IOSC30KHZ
f_XOSC
f_{XOSC_XTAL}
f_{XOSC_EXT}
Parameter Name
Internal 12 MHz oscillator frequency
Internal 30 KHz oscillator frequency
Hibernation module oscillator frequency
Crystal reference for hibernation oscillator
External clock reference for hibernation module
Min Nom Max Unit
8.4 12 15.6 MHz
21 30
39 KHz
- 4.194304 - MHz
- 4.194304 - MHz
- 32.768 - KHz
November 30, 2007
537
Preliminary