M12L128168A_06 Datasheet, PDF (31/43 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M12L128168A
Page Read & Write Cycle at Same Bank @ Burst Length = 4
0
CLOCK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18 19
CKE
HIGH
CS
RAS
tRCD
CAS
ADDR
Ra
Ca
Cb
*Note2
Cc
Cd
A13
A12
A10/AP
Ra
CL =2
DQ
CL =3
WE
DQM
Row Active
( A - Bank )
Qa0 Qa1 Qb0 Qb1 Qb2
Qa0 Qa1 Qb0 Qb1
tRDL
Dc0 Dc1 Dd0 Dd1
Dc0 Dc1 Dd0 Dd1
tCDL
Read
( A - Bank )
Read
( A - Bank )
*Note1
*Note3
Write
( A - Bank )
Write
( A - Bank )
Precharge
(A - Bank)
:Don't Care
Note : 1. To Write data before burst read ends. DQM should be asserted three cycle prior to write command to avoid bus
contention.
2. Row precharge will interrupt writing. Last data input , t_RDL before row precharge , will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
data after Row precharge cycle will be masked internally.
Elite Semiconductor Memory Technology Inc.
Publication Date: Oct. 2006
Revision: 2.0
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