DG646BH25 Datasheet, PDF (9/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG646BH25
4.0
Conditions: T_j = 125˚C, I_FGM = 30A,
C_S = 2.0µF, V_D = 1500V,
R_S = 10Ω, dI_T/dt = 300A/µs, dI_F/dt = 30A/µs
3.0
t_r
2.0
t_d
1.0
0
0
500
1000
1500
2000
2500
3000
On-state current I_T - (A)
Fig.13 Delay time & rise time vs turn-on current
5.0
Conditions:
T_j = 125˚C, I_T = 2000A,
C_S = 2.0µF,
R_S = 10 Ohms,
4.0
dI/dt = 300A/µs,
dI_FG/dt = 30A/µs,
V_D = 1500V
3.0
t_r
2.0
1.0
t_d
0
0
20
40
60
80
Peak forward gate current I_FGM - (A)
Fig.14 Delay time & rise time vs peak forward gate current
9/19