DG646BH25 Datasheet, PDF (11/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG646BH25
4000
3000
Conditions:
T_j = 125˚C,
C_S = 2.0µF,
dI_GQ/dt = 40A/µs
V_DRM
0.75x V_DRM
2000
1000
0.5x V_DRM
0
0
500
1000
1500
2000
2500
On-state current I_T - (A)
FIG 17 _FT_iU_g.R₁N_{7 T}O_uF_rnF_-oE_ffN_eE_nR_erG_gY_{y vs o}O_nN_-stS_atT_eA_cT_uE_rreC_nU_t RRENT
5000
4000
Conditions:
T_j = 125˚C,
C_S = 2.0µF,
I_T = 2000A
V_DRM
3000
3000
0.75x V_DRM
2000
0.5x V_DRM
1000
20
30
40
50
60
70
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19