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| DG646BH25 Datasheet, PDF (7/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG646BH25
2000
1500
1000
500
Conditions:
Tj = 25ËC, IFGM = 30A,
CS = 2.0µF, RS = 10â¦,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
VD = 1500V
VD = 1000V
VD = 750V
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
Fig.8 Turn-on energy vs on-state current
2000
1500
Conditions:
Tj = 25ËC, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
3000
1000
500
VD = 1500V
VD = 1000V
VD = 750V
0
0
20
40
60
80
Peak forward gate current IFGM - (A)
Fig.9 Turn-on energy vs peak forward gate current
7/19
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