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DG646BH25 Datasheet, PDF (8/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor
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DG646BH25
2000
1500
Conditions:
Tj = 125˚C, IFGM = 30A,
CS = 2.0µF,
RS = 10 Ohms,
dIT/dt = 300A/µs,
dIF/dt = 30A/µs
1000
500
VD = 1500V
VD = 1000V
VD = 750V
0
0
2000
1500
1000
500
500
1000
1500
2000
2500
On-state current IT - (A)
Fig.10 Turn-on energy vs on-state current
3000
Conditions:
Tj = 125˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
VD = 1500V
VD = 1000V
VD = 750V
2000
1500
Conditions:
IT = 2000A,
Tj = 125˚C,
CS = 2.0µF
RS = 10 Ohms
IFGM = 30A,
dIFG/dt = 30A/µs
1000
500
VD = 1500V
VD = 1000V
VD = 750V
0
0
20
40
60
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
0
80
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
FIG 12 TURN ON ENERGY RATE OF RISE
Fig.12 Turn-on energy vs rate of rise of on-state current
8/19
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