DG646BH25 Datasheet, PDF (14/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG646BH25
2.5
Conditions:
C_S = 2.0µF,
I_T = 2000A
2.0
T_j = 125˚C
1.5
T_j = 25˚C
1.0
0.5
20
30
40
50
60
70
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of reverse gate current
800
Conditions:
C_S = 2.0µF,
dI_GQ/dt = 40A/µs
600
T_j = 125˚C
T_j = 25˚C
400
200
0
0
500
1000
1500
2000
2500
3000
Turn-off current I_T - (A)
Fig.24 Peak reverse gate current vs turn-off current
14/19