DG646BH25 Datasheet, PDF (3/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

CHARACTERISTICS
T = 125oC unless stated otherwise
j
Symbol
Parameter
V_TM
I_DM
I_RRM
V_GT
I_GT
I_RGM
E_ON
t_d
t_r
E
OFF
t
gs
t_gf
t_gq
Q
GQ
Q
GQT
I_GQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
DG646BH25
Conditions
At 2000A peak, I_G(ON) = 7A d.c.
V_DRM = 2500V, V_RG = 0V
At V_RRM
V_D = 24V, I_T = 100A, T_j = 25^oC
V_D = 24V, I_T = 100A, T_j = 25^oC
V = 16V, No gate/cathode resistor
RGM
V_D = 15000V
I_T = 2000A, dI_T/dt = 300A/µs
I_FG = 30A, rise time < 1.0µs
I_T = 2000A, V_DM = 2500V
Snubber Cap Cs = 2.0µF,
di_GQ/dt = 40A/µs
Min. Max. Units
-
2.6
V
-
100 mA
-
50 mA
-
1.0
V
-
3.0
A
-
50 mA
- 1188 mJ
-
1.2
µs
-
3.0
µs
- 4000 mJ
-
17.0 µs
-
2.0
µs
-
19.0 µs
-
6600 µC
- 13200 µC
-
650
A
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