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DG646BH25 Datasheet, PDF (4/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG646BH25
CURVES
2.0
8.0
1.5
6.0
1.0
4.0
VGT
0.5
2.0
IGT
0
0
-50 -25 0 25 50 75 100 125 150
Junction temperature Tj - (ËC)
Fig.1FIMGax1imMuAmXgIMatUe MtrigGgAerTvEoTltRagIGe/GcuErrRenVtOvsLTjuAnGctEio/Cn UteRmRpEerNaTture
4000
Measured under pulse conditions.
IG(ON) = 7A
Half sine wave 10ms
3000
Tj = 25ËC
Tj = 125ËC
2000
1000
0
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
4/19
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