DG646BH25 Datasheet, PDF (12/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG646BH25
4000
3000
Conditions:
T_j = 125˚C,
V_DM = V_DRM,
dI_GQ/dt = 40A/µs
C_S = 2.0µF
C_S = 4.0µF
2000
1000
0
0
500
1000
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2000
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On-state current I_T - (A)
Fig.19 Turn-off energy vs on-state current
20.0
Conditions:
C_S = 2.0µF,
dI_GQ/dt = 40A/µs
15.0
T_j = 125˚C
T_j = 25˚C
10.0
5.0
0
0
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1000
1500
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2500
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On-state current I_T - (A)
Fig.20 Gate storage time vs on-state current
12/19