DG646BH25 Datasheet, PDF (10/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG646BH25
2500
2000
Conditions:
T_j = 25˚C,
C_S = 2.0µF,
dI_GQ/dt = 40A/µs
1500
1000
V_DRM
0.75x V_DRM
0.5x V_DRM
500
0
0
500
1000
1500
2000
2500
3000
On-state current I_T - (A)
FIG 15 TURN OFF ENERGY ON STATE CURRENT
Fig.15 Turn-off energy vs on-state current
2500
2000
1500
1000
V_DRM
0.75x V_DRM
Conditions:
T_j = 25˚C,
C_S = 2.0µF,
I_T = 2000A
0.5x V_DRM
10/19
500
20
30
40
50
60
70
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current