DS8007 Datasheet, PDF (6/41 Pages) Dallas Semiconductor – Multiprotocol Dual Smart Card Interface

Multiprotocol Dual Smart Card Interface
ELECTRICAL CHARACTERISTICS (continued)
(V_DD = +3.3V, V_DDA = +3.3V, T_A = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Input Low Voltage
V_ILAUX
-0.3
0.3 x
V
V_DD
Input High Voltage
V_IHAUX
Input Low Current
I_ILAUX
Input High Current
I_IHAUX
Input Rise/Fall Time
t_IT
INTERRUPT PIN
Output Low Voltage
V_OLINT
Input High Leakage Current
I_LIHINT
D7 TO D0, ALL OTHER LOGIC PINS
V_ILAUX = 0V
V_IHIO = V_DD
C_L = 30pF
I_OH = 2mA
0.7 x
V_DD
-20
V_DD
V
700
µA
+20
µA
1.2
µs
0.3
V
10
µA
Output Low Voltage
V_OLD I_OLD = +5mA
0.2 x
V
V_DD
Output High Voltage
Output Rise/Fall Time
Input Low Voltage
V_OD
t_OT
V_ILD
I_OHD = -5mA
C_L = 50pF
0.8 x
V_DD
V_DD
V
25
ns
0.3 x
V
V_DD
Input High Voltage
Input Low Current
Input High Current
Load Capacitance
V_IHD
I_ILD
I_IHD
C_LD
0.7 x
V_DD
-20
-20
V
+20
µA
+20
µA
10
pF
Note 1:
Note 2:
Note 3:
Operation guaranteed at -40°C and +85°C but not tested.
Parameters are guaranteed to meet all ISO 7816, GSM11-11, and EMV 2000 requirements. For the 1.8V card, the maxi-
mum rise and fall time is 10ns.
Parameter is guaranteed to meet all ISO 7816, GSM11-11, and EMV 2000 requirements. For the 1.8V card, the minimum
slew rate is 0.05V/µs and the maximum slew rate is 0.5V/µs.
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