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DS8007 Datasheet, PDF (5/41 Pages) Dallas Semiconductor – Multiprotocol Dual Smart Card Interface
Multiprotocol Dual Smart Card Interface
ELECTRICAL CHARACTERISTICS (continued)
(VDD = +3.3V, VDDA = +3.3V, TA = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
Card
Inactive
Mode
Output Low
Voltage
Output Current
Internal Pullup
Resistor
VOLC48 IOLC48 = 1mA
IOLC48 VOLC48 = 0V
RPULLUP Between C4 or C8 and VCCx
Output Low
Voltage
Output High
Voltage
Output
Rise/Fall Time
VOLC48 IOLC48 = 1mA
VOHC48
IOHC48 ≤ -20µA
IOHC48 ≤ -40µA (3V/5V)
tOT
CL = 30pF
C4x,
C8x
Pins
Card
Active
Mode
Input Low
Voltage
Input High
Voltage
Input Low
Current
VILC48
VIHC48
IILC48 VILIO = 0V
Input High
Current
IIHC48 VIHIO = VCC
Input Rise/Fall
Time
tIT
CL = 30pF
Pullup Pulse
Width
tWPU Active pullup
Operating
Frequency
TIMING
Activation Sequence Duration
Deactivation Sequence Duration
PRESA/PRESB PINS
Input Low Voltage
Input High Voltage
Input Low Current
Input High Current
I/OAUX PIN
Internal Pullup Resistor
Output Low Voltage
Output High Voltage
Output Rise/Fall Time
fMAX On card contact pins
tACT
tDE
See Figure 9
See Figure 9
VILPRES
VIHPRES
IILPRES
IIHPRES
VILPRES = 0V
VIHPRES = VDD
RPULLUP
VOLAUX
VOHAUX
tOT
Between I/OAUX and VDD
IOLAUX = 1mA
IOHAUX = 40µA (3V/5V)
CL = 30pF
MIN TYP MAX UNITS
0
0.3
V
0
-1
mA
6
10
14
kΩ
0
0.8 x VCC
0.75 x VCC
0.3
V
VCC
VCC
0.1
µs
-0.3
+0.8
V
1.5
VCC
850
µA
20
1.2
µs
200
ns
1
MHz
130
µs
150
µs
0.7 x VDD
0.25 x VDD V
V
40
µA
40
µA
9
14
19
kΩ
0.3
V
0.75 x VDD
VDD
V
0.1
µs
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