DS8007 Datasheet, PDF (3/41 Pages) Dallas Semiconductor – Multiprotocol Dual Smart Card Interface

Multiprotocol Dual Smart Card Interface
ELECTRICAL CHARACTERISTICS (continued)
(V_DD = +3.3V, V_DDA = +3.3V, T_A = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Alarm Pulse Width
External Clock Frequency
Internal Oscillator
Voltage on V_UP Pin
SYMBOL
t_W
f_XTAL
f_INT
V_UP
CONDITIONS
C_DELAY = 22nF
External crystal
External oscillator
3x step-up
2x step-up
Voltage Detection of V_DDA for 2x,
3x Step-Up
Shutdown Temperature
Card
Inactive
Mode
Output Low
Voltage
Output Current
Output Low
Voltage
V_DET
T_SD
V_OLRST I_OLRST = 1mA
I_OLRST V_OLRST = 0V
V_OLRSTL I_OLRST = +200µA
RSTx
Pins
Card
Active
Mode
Output High
Voltage
Rise Time
Fall Time
Shutdown
Current
V_OHRSTH I_OHRST = -200µA
t_RRST
t_FRST
C_L = 30pF
C_L = 30pF
I_RST(SD)
Current
Limitation
I_RST(LIMIT)
Card
Inactive
Mode
Output Low
Voltage
Output Current
Output Low
Voltage
V_OLCLK I_OLCLK = 1mA
I_OLCLK V_OLCLK = 0V
V_OLCLK I_OLCLK = +200µA
CLKx _Card
Pins _Active
Mode
Output High
Voltage
Rise Time
Fall Time
Current
Limitation
Clock Frequency
Duty Factor
V_OHCLK I_OHCLK = -200µA
t_RCLK
t_FCLK
C_L = 30pF (Note 2)
C_L = 30pF (Note 2)
I_CLK(LIMIT)
f_CLK
δ
Idle configuration (1MHz)
Operational
C_L = 30pF
MIN TYP
10
4
0
1.6
2.5
5.7
4.1
3.35 3.50
+150
0
0
0
V_CC –
0.5
-25
-25
MAX
20
20
3.7
3.60
0.3
-1
0.3
V_CC
0.1
0.1
+25
UNITS
ms
MHz
MHz
V
V
°C
V
mA
V
µs
mA
0
0
0
V_CC –
0.5
-70
1
0
45
0.3
V
-1
mA
0.3
V
V_CC
8
ns
8
+70
mA
1.85
MHz
10
55
%
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