S6E2H4 Datasheet, PDF (81/160 Pages) SPANSION – fpu built-in

S6E2H4 Series
Table 12-10 Typical and Maximum Current Consumption in Low-voltage Detection Circuit, Main Flash Memory Write/erase
Parameter
Symbol Pin Name Conditions
Min
Value
Typ
Max
Unit
Remarks
Low-voltage
detection circuit
(LVD) power
supply current
ICCLVD
At operation
-
4
7
μA
For occurrence of
interrupt
Main flash
memory
write/erase
current
ICCFLASH
VCC
At Write/Erase
-
13.4
15.9
mA
Work flash
memory
write/erase
current
ICCWFLASH
At Write/Erase
-
11.5
13.6
mA *1
1: When programming or erase in flash memory, Flash Memory Write/Erase current (ICCFLASH) is added to the Power
supply current (ICC).
Table 12-11 Peripheral Current Dissipation
Clock System
Peripheral
Unit
HCLK
PCLK1
PCLK2
GPIO
DMAC
DSTC
External bus I/F
CAN
Base timer
Multi-functional
timer/PPG
Quadrature
position/Revolution
counter
A/DC
Muli-function serial
All ports
-
-
-
1ch.
4ch.
1unit/4ch.
1unit
1unit
1ch.
Frequency (MHz)
40
80
160
Unit
0.16
0.32
0.62
0.68
1.35
2.63
0.93
1.88
3.65
mA
0.17
0.34
0.71
0.01
0.02
0.03
0.18
0.37
0.73
0.61
1.22
2.43
mA
0.04
0.07
0.14
0.22
0.44
0.88
0.30
0.60
-
mA
Remarks
TA=+25°C,
VCC=3.3 V
TA=+25°C,
VCC=3.3 V
TA=+25°C,
VCC=3.3 V
Document Number: 001-98941 Rev.*B
Page 81 of 160