LUPA-1300_09 Datasheet, PDF (4/32 Pages) Cypress Semiconductor – 1.3MPxl High Speed CMOS Image Sensor

LUPA-1300
Specifications
General specifications
Table 1. General specifications of the LUPA sensor
Parameter
Pixel architecture
Specification
6T-pixel
Pixel size
Resolution
Pixel rate
Shutter type
Full frame rate
Package
14 µm x 14 µm
1280 x1024
640 MHz
Pipelined snapshot shutter
450 frames/second
Pin grid array 145 pins
Remarks
Based on the high-fill factor active pixel sensor technology of
FillFactory
The resolution and pixel size results in a 17.9 mm x 14.3 mm optical
active area.
Using a 20 MHz system clock and 16 parallel outputs.
Full snapshot shutter with variable integration time
Frame rate increase possible with ROI read out and/or sub sampling.
PGA pins with 0.46 mm diameter
Electro-optical characteristics
Overview
Table 2. Electrical-optical specifications of the LUPA-1300 sensor
Parameter
FPN
PRNU
Conversion gain
Output signal amplitude
Saturation charge
Specification
<3% RMS
2% RMS
16 uV/electron
1V
62.500 e-
Sensitivity
1500 V.m2/W.s
8.33 V/lux.s
21.43 V/lux.s
Fill Factor
50%
Peak QE * FF
Peak SR * FF
15%
0.08 A/W
MTF
X: 67%
Y: 66%
Temporal Noise
45e-
S/N ratio
1330
Spectral sensitivity range 400 - 1000 nm
Parasitic light sensitivity < 0.5%
Power dissipation
Output impedance
900 mWatt
200-300 Ohms
<10% p/p.
Half saturation.
Remarks
Unity gain.
Is more then 60.000 (=1V/16uV/e-) due to non-linearity in saturated
region.
Average white light.
Visible band only (180 lx = 1 W/m2).
Visible + NIR (70 lx = 1 W/m2).
100%-metal and polycide coverage.
See spectral response curve.
@ Nyquist
Dark environment, measured at T=21 ^oC.
1330 = 60000:45 = 62 dB.
I.e. sensitivity of the storage node compared to the sensitivity of
photodiode
Typical.
Typical
Document Number: 38-05711 Rev. *C
Page 4 of 32
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