AMC0XXDFLKA Datasheet, PDF (40/46 Pages) Advanced Micro Devices – 4, 8, 20, or 32 Megabyte 5.0 Volt-only Flash Memory PC Card

AC CHARACTERISTICS—ALTERNATE CE CONTROLLED WRITES
Write/Erase/Program Operations
Card Speed
Parameter Symbol
-150 ns
JEDEC Standard
Parameter Description
Min
Max
Unit
t_AVAV
t_AVEL
t_ELAX
t_DVEH
t_EHDX
t_GLDV
t_GHEL
t_WLEL
t_EHWH
t_ELEH
t_EHEL
t_EHEH3
t_WC
t_AS
t_AH
t_DS
t_DH
t_OE
t_WS
t_WH
t_CP
t_CPH
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Hold Time for Embedded Algorithm
Read Recovery Time before Write
WE Setup Time before CE
WE Hold Time
CE Pulse Width
CE Pulse Width HIGH (Note 3)
Embedded Programming Operation (Notes 3, 4)
150
ns
20
ns
55
ns
50
ns
20
ns
20
ns
20
ns
0
ns
0
ns
80
ns
50
ns
8
µs
2
ms
t_EHEH4
Embedded Erase Operation for each 64K byte Memory Sector
(Notes 1, 2)
s
t_VCS
V_CC Setup Time to Write Enable LOW
50
ms
Notes:
1. Rise/Fall ≤10 ns.
2. Maximum specification not needed due to the internal stop timer that will stop any erase or write operation that exceed the
device specification.
3. Card Enable Controlled Programming:
Flash Programming is controlled by the valid combination of the Card Enable (CE1, CE2) and Write Enable (WE) signals. For
systems that use the Card Enable signal(s) to define the write pulse width, all Setup, Hold, and inactive Write Enable timing
should be measured relative to the Card Enable signal(s).
4. Embedded Program Operation of 8 µs consist of 6 µs program pulse and 2 µs write recovery before read. This is the minimum
time for one pass through the programming algorithm. D5 = “1” only after a byte takes longer than 2 ms to Write.
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AmC0XXDFLKA