AMC0XXDFLKA Datasheet, PDF (27/46 Pages) Advanced Micro Devices – 4, 8, 20, or 32 Megabyte 5.0 Volt-only Flash Memory PC Card

WORD-WIDE PROGRAMMING AND
ERASING
Word-Wide Programming
The word-wide programming sequence will be as
usual per Table 5. The Program word command is
A0A0H. Each byte is independently programmed.
For example, if the high byte of the word indicates
the successful completion of programming via one
of its write status bits such as D15, software polling
should continue to monitor the low byte for write
completion and data verification, or vice versa. Dur-
ing the Embedded Programming operations the de-
v i c e exe c u t e s p r o g r a m m i n g p u l s e s i n 8 µ s
increments. Status reads provide information on the
progress of the byte programming relative to the last
complete write pulse. Status information is automat-
ically updated upon completion of each internal
write pulse. Status information does not change
within the 8 µs write pulse width.
Word-Wide Sector Erasing
The word-wide erasing of a memory sector pair is sim-
ilar to word-wide programming. The erase word com-
mand is a 6 bus cycle command sequence per Table 5.
Each byte is independently erased and verified.
Word-wide erasure reduces total erase time when
compared to byte erasure. Each Flash memory device
in the card may erase at different rates. Therefore each
device (byte) must be verified separately.
Start
Write Embedded
Programming or Erase
command sequence to
memory segments
Software polling from
memory segments
The Embedded Algorithm operations completely automate
the parallel programming and erase procedures by inter-
nally executing the algorithmic command sequences of
AMD’s Flashrite and Flasherase algorithms. The devices
automatically provide Write Operation Status information
with standard read operations.
See Table 5 for Program Command Sequence.
Completed
19521D-13
Figure 12. Embedded Algorithm Word-Wide Programming and Erasure Overview
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