AMC0XXDFLKA Datasheet, PDF (12/46 Pages) Advanced Micro Devices – 4, 8, 20, or 32 Megabyte 5.0 Volt-only Flash Memory PC Card

Table 5. Word Command Definitions (Notes 1–7)
Embedded
Command
Sequence
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Addr* Data
Second Bus
Write Cycle
Addr* Data
Third Bus
Fourth Bus
Write Cycle Read/Write Cycle
Addr* Data Addr* Data
Fifth Bus
Write Cycle
Addr* Data
Sixth Bus
Write Cycle
Addr* Data
Reset/Read
1 XXXXH F0F0
Reset/Read
4 XXXXH AAAA XXXXH 5555 XXXXH F0
RA
RW
Autoselect
00H 0101
4 XXXXH AAAA XXXXH 5555 XXXXH 90
02H 3D3D
Byte Write
4 XXXXH AAAA XXXXH 5555 XXXXH A0A0 PA
PW
Segment
Erase
6 XXXXH AAAA XXXXH 5555 XXXXH 8080 XXXXH AAAA 5554H 5555 XXXXH 1010
Sector Erase
6 XXXXH AAAA XXXXH 5555 XXXXH 8080 XXXXH AAAA 5554H 5555 SA 3030
Sector Erase Suspend XXXXH B0B0 Erase can be suspended during sector erase with Addr (don’t care), Data (B0B0H)
Sector Erase Resume XXXXH 3030 Erase can be resumed after suspend with Addr (don’t care), Data (3030H)
Notes:
1. Address bits = X = Don’t Care for all address commands except for Program Address (PA) and Sector Address (SA).
2. Bus operations are defined in Table 1.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WEpulse.
SA = Address of the sector to be erased. The combination of A17, A18, A19, A20, A21will uniquely select any sector of a
segment.
To select the memory segment: 4 Mbyte:
Use CE1, CE2
8 Mbyte:
Use CE1, CE2
20 and 32 Mbyte: Use CE1, CE2, A22–A24.
4. RW = Data read from location RA during read operation. (Word Mode).
PW = Data to be programmed at location PA. Data is latched on the rising edge of WE. (Word Mode).
5. Address for Memory Segment Pair 0 (S0 and S1) only. Address for the higher Memory Segment Pairs (S2, S3 = Pair 1; S4,
S5 = Pair 2; S6, S7 = Pair 3…) is equal to (Addr) + M* (40000H) where M = Memory Segment Pair number.
6. Word = 2 bytes = odd byte and even byte.
7. CE1 = 0 and CE2 = 0.
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