AMC0XXDFLKA Datasheet, PDF (11/46 Pages) Advanced Micro Devices – 4, 8, 20, or 32 Megabyte 5.0 Volt-only Flash Memory PC Card

Table 4. Odd Byte Command Definitions (Notes 1–5)
Embedded
Command
Sequence
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Addr* Data
Second Bus
Write Cycle
Addr* Data
Third Bus
Fourth Bus
Write Cycle Read/Write Cycle
Addr* Data Addr* Data
Fifth Bus
Write Cycle
Addr* Data
Sixth Bus
Write Cycle
Addr* Data
Reset/Read
1 XXXXH F0
Reset/Read
4 XXXXH AA XXXXH 55 XXXXH F0 RA
RD
Autoselect
00H
01
4 XXXXH AA XXXXH 55 XXXXH 90
02H
3D
Byte Write
4 XXXXH AA XXXXH 55 XXXXH A0 PA
PD
Segment Erase 6 XXXXH AA XXXXH 55 XXXXH 80 XXXXH AA XXXXH 55 XXXXH 10
Sector Erase
6 XXXXH AA XXXXH 55 XXXXH 80 XXXXH AA XXXXH 55 SA 30
Sector Erase Suspend XXXXH AA Erase can be suspended during sector erase with Addr (don’t care), Data (B0H)
Sector Erase Resume XXXXH AA Erase can be resumed after suspend with Addr (don’t care), Data (30H)
* Address for Memory Segment 1 (S1) only. Address for the higher odd memory segments (S3–S15) = (Addr) + ((N–1)/2)*
400000H + 20000H where N = Memory Segment number (1) for 4 Mbyte, N = (1, 3) for 8 Mbyte, N = (1, 3, 5) for 12 Mbyte,
N = (1…9) for 20 Mbyte, N = (1...15) for 32 Mbyte.
Notes:
1. Address bits = X = Don’t Care for all address commands except for Program Address (PA), Read Address (RA) and Sector
Address (SA).
2. Bus operations are defined in Table 1.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WEpulse.
SA = Address of the sector to be erased. The combination of A17, A18, A19, A20, A21 will uniquely select any sector of a
segment.
To select the memory segment: 4 Mbyte:
Use CE2
8 Mbyte:
Use CE2 and A22
20 and 32 Mbyte: Use CE2 and A22–A24.
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE pulse.
5. A0 = 1 and CE1 = 0 or A0 = X and CE2 = 0.
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