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MT46V32M16CV-5B Datasheet, PDF (21/93 Pages) Alliance Semiconductor Corporation – Double Data Rate (DDR) SDRAM
512Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
Table 13: DC Electrical Characteristics and Operating Conditions (-6, -6T, -75E, -75Z, -75)
Notes: 1–5 and 17 apply to the entire table; Notes appear on page 37; VDDQ = 2.5V ±0.2V, VDD = 2.5V ±0.2V
Parameter/Condition
Supply voltage
I/O supply voltage
I/O reference voltage
I/O termination voltage (system)
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current:
Any input 0V d VIN d VDD, VREF pin 0V d VIN d 1.35V
(All other pins not under test = 0V)
Output leakage current:
(DQ are disabled; 0V d VOUT d VDDQ)
Full-drive option output
levels (x4, x8, x16):
High current (VOUT =
VDDQ - 0.373V, minimum
VREF, minimum VTT)
Low current (VOUT =
0.373V, maximum VREF,
maximum VTT)
Reduced-drive option
output levels:
High current (VOUT =
VDDQ - 0.373V, minimum
VREF, minimum VTT)
Low current (VOUT =
0.373V, maximum VREF,
maximum VTT)
Ambient operating
Commercial
temperatures
Industrial
Symbol
VDD
VDDQ
VREF
VTT
VIH(DC)
VIL(DC)
II
IOZ
IOH
IOL
IOHR
IOLR
TA
TA
Min
2.3
2.3
0.49 × VDDQ
VREF - 0.04
VREF + 0.15
–0.3
–2
–5
–16.8
16.8
–9
9
0
–40
Max
2.7
2.7
0.51 × VDDQ
VREF + 0.04
VDD + 0.3
VREF - 0.15
2
5
–
–
–
–
70
85
Units
V
V
V
V
V
V
µA
Notes
37, 42
37, 42, 45
7, 45
8, 45
29
29
µA
mA
38, 40
mA
mA
39, 40
mA
°C
°C
Table 14:
AC Input Operating Conditions
Notes: 1–5 and 17 apply to the entire table; Notes appear on page 37;
0°C d TA d 70°C; VDDQ = 2.5V ±0.2V, VDD = 2.5V ±0.2V (VDDQ = 2.6V ±0.1V, VDD = 2.6V ±0.1V for -5B)
Parameter/Condition
Input high (logic 1) voltage
Input low (logic 0) voltage
I/O reference voltage
Symbol
VIH(AC)
VIL(AC)
VREF(AC)
Min
VREF + 0.310
–
0.49 × VDDQ
Max
–
VREF - 0.310
0.51 × VDDQ
Units
V
V
V
Notes
15, 29, 41
15, 29, 41
7
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. Q; Core DDR Rev. E 7/11 EN
21
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