AS4C32M16SB-7TIN Datasheet, PDF (20/55 Pages) Alliance Semiconductor Corporation – 54pin TSOPII PACKAGE

AS4C32M16SB-6TIN
AS4C32M16SB-7TIN
AS4C32M16SB-7TCN
Table 15. D.C. Characteristics (VDD = 3.3V ± 0.3V, T_A = -40~85°C)
Description/Test condition
Symbol
-6
-7
Max.
Operating Current
tRC ≥ tRC(min), Outputs Open, One bank active
IDD1
120 110
Precharge Standby Current in non-power down mode
tCK = 15ns, CS# ≥ VIH(min), CKE ≥ V_IH
Input signals are changed every 2clks
IDD2N
50
40
Precharge Standby Current in non-power down mode
tCK = ∞, CLK ≤ V_IL(max), CKE ≥ V_IH
IDD2NS
36
36
Unit Note
3
Precharge Standby Current in power down mode
tCK = 15ns, CKE ≤ VIL(max)
IDD2P
4
4
Precharge Standby Current in power down mode
tCK = ∞, CKE ≤ VIL(max)
Active Standby Current in non-power down mode
tCK = 15ns, CKE ≥ VIH(min), CS# ≥ VIH(min)
Input signals are changed every 2clks
Active Standby Current in non-power down mode
CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞
IDD2PS
4
IDD3N
70
IDD3NS
70
4
mA
60
60
Operating Current (Burst mode)
tCK =tCK(min), Outputs Open, Multi-bank interleave
IDD4
124 120
3, 4
Refresh Current
tRC ≥ tRC(min)
IDD5
160 150
3
Self Refresh Current
CKE ≤ 0.2V ; for other inputs VIH≧VDD - 0.2V, VIL ≤ 0.2V
IDD6
4
4
Confidential
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Rev.1.0 June 2016