XQ18V04_03 Datasheet, PDF (9/15 Pages) Xilinx, Inc – IEEE Std 1149.1 boundary-scan (JTAG) support

R
QPro XQ18V04 Military 4Mbit ISP Configuration Flash PROM
Absolute Maximum Ratings^(1,2)
Table 8: Absolute Maximum Ratings
Symbol
Description
Value
Units
V_CCINT/V_CCO
V_IN
V_TS
T_STG
T_J
Supply voltage relative to GND
Input voltage with respect to GND
Voltage applied to High-Z output
Storage temperature (ambient)
Junction temperature
Ceramic
Plastic
–0.5 to +4.0
V
–0.5 to +5.5
V
–0.5 to +5.5
V
–65 to +150
°C
+150
°C
+125
°C
T_SOL
Maximum soldering temperature
+220
°C
Notes:
1. Maximum DC undershoot below GND must be limited to either 0.5V or 10 mA, whichever is easier to achieve. During transitions, the
device pins may undershoot to –2.0V or overshoot to +7.0V, provided this overshoot or undershoot lasts less then 10 ns and with the
forcing current being limited to 200 mA.
2. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions
is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time may affect device reliability.
Recommended Operating Conditions
Table 9: Recommended Operating Conditions
Symbol
Parameter
V_CCINT
V_CCO
Internal voltage supply (T_C = –55° C to +125° C)
Internal voltage supply (T_J = –55° C to +125° C)
Supply voltage for output drivers for 3.3V operation
Supply voltage for output drivers for 2.5V operation
Ceramic
Plastic
Min
Max Units
3.0
3.6
V
3.0
3.6
V
3.0
3.6
V
2.3
2.7
V
V_IL
V_IH
V_O
T_VCC
Low-level input voltage
High-level input voltage
Output voltage
V_CCINT rise time from 0V to nominal voltage¹
0
0.8
V
2.0
5.5
V
0
V_CCO
V
1
50
ms
Notes:
1. At power up, the device requires the V_CCINT power supply to monotonically rise from 0V to nominal voltage within the specified
V_CCINT rise time. If the power supply cannot meet this requirement, then the device might not perform power-on-reset properly.
Quality and Reliability Characteristics
Table 10: Reliability Characteristics
Symbol
Description
Min
Max
Units
T_DR
N_PE
V_ESD
Data retention
Program/erase cycles (Endurance)
Electrostatic discharge (ESD)
10
-
Years
20,000
-
Cycles
2,000
-
Volts
DS125 (v1.0) December 16, 2003
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