W988D6FB_13 Datasheet, PDF (9/66 Pages) Winbond – 256Mb Mobile LPSDR

W988D6FB / W988D2FB
7. ELECTRICAL CHARACTERISTICS
256Mb Mobile LPSDR
7.1 Absolute Maximum Ratings
Parameter
Symbol
Values
Min
Max
Units
Voltage on VDD relative to VSS
VDD
−0.5
2.3
V
Voltage on VDDQ relative to VSS
VDDQ
−0.5
2.3
V
Voltage on any pin relative to VSS
Operating Temperature
Storage Temperature
VIN, VOUT
Tc
TSTG
−0.5
-25
-40
−55
2.3
V
85
85
°C
150
°C
Short Circuit Output Current
IOUT
±50
mA
Power Dissipation
PD
1.0
W
Notes: stresses greater than those listed in “absolute maximum ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
7.2 Operating Conditions
Parameter
Symbol
Min.
Typ.
Supply Voltage
VDD
1.7
1.8
Supply Voltage (for I/O Buffer)
VDDQ
1.7
1.8
Input High level Voltage
VIH
0.8*VDDQ
-
Input Low level Voltage
VIL
-0.3
-
LVCOMS Output ^H^ Level Voltage
(IOUT = -0.1 mA )
LVCMOS Output ^L^ Level Voltage
(IOUT = +0.1 mA )
VOH
VOL
0.9xVDDQ
-
-
-
Input Leakage Current
(0V  VIN  VDD, all other pins
not under test = 0V)
II(L)
-1
-
Output Leakage Current (Output disable ,
0V  VOUT  VDDQ)
IO(L)
-5
-
Note: VIH(max) = VDD/ VDDQ+1.2V for pulse width < 5 ns , VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 ns
Max.
1.95
1.95
VDDQ + 0.3
+0.3
Unit
V
V
V
V
-
V
0.2
V
1
A
5
A
7.3 Capacitance
Parameter
Input Capacitance
(A[ n : 0] , BA0, BA1, CS , RAS , CAS , WE , DQM, CKE)
Input Capacitance (CLK)
Input/Output capacitance
Note: These parameters are periodically sampled and not 100% tested.
Symbol Min. Max. Unit
CI
1.5
3.0
pf
CCLK
1.5
3.5
pf
CIO
3.0
5.0
pf
-9-
Publication Release Date : August 15, 2013
Revision A01-004