W988D6FB_13 Datasheet, PDF (1/66 Pages) Winbond – 256Mb Mobile LPSDR

W988D6FB / W988D2FB
256Mb Mobile LPSDR
1. GENERAL DESCRIPTION
The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing
268,435,456 memory cells fabricated with Winbond high performance process technology.
It is designed to consume less power than the ordinary SDRAM with low power features essential
for applications which use batteries. It is available in two organizations: 2,097,152 words × 4 banks
× 32 bits or 4,194,304 words × 4 banks × 16 bits. The device operates in a fully synchronous
mode, and the output data are synchronized to positive edges of the system clock and is capable
of delivering data at clock rate up to 166MHz. The device supports special low power functions
such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh
(ATCSR).
The Low Power SDRAM is suitable for 2.5G / 3G cellular phone, PDA, digital still camera, mobile
game consoles and other handheld applications where large memory density and low power
consumption are required. The device operates from 1.8V power supply, and supports the 1.8V
LVCMOS bus interface.
2. FEATURES
 Power supply VDD = 1.7V~1.95V
 VDDQ = 1.7V~1.95V
 Frequency : 166MHz(-6),133MHz(-75)
 Programmable Partial Array Self Refresh
 Power Down Mode
 Deep Power Down Mode (DPD)
 Programmable output buffer driver strength
 Automatic Temperature Compensated Self Refresh
 CAS Latency: 2 and 3
 Burst Length: 1, 2, 4, 8, and full page
 Refresh: refresh cycle 64ms
 Interface: LVCMOS
 Support package :
54 balls VFBGA (x16)
90 balls VFBGA (x32)
 Operating Temperature Range
Extended (-25°C ~ +85°C)
Industrial (-40°C ~ +85°C)
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Publication Release Date : August 15, 2013
Revision A01-004