W25Q32FV Datasheet, PDF (86/99 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q32FV
AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ⁽²⁾
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
ns
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
ns
/CS High to Power-down Mode
/CS High to Standby Mode without ID Read
tDP⁽²⁾
tRES1⁽²⁾
3
µs
3
µs
/CS High to Standby Mode with ID Read
/CS High to next Instruction after Suspend
tRES2⁽²⁾
tSUS⁽²⁾
1.8
µs
20
µs
/CS High to next Instruction after Reset
/RESET pin Low period to reset the device
tSUS⁽²⁾
tRST⁽²⁾⁽⁵⁾
1
30
µs
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
W25Q32FVxxIG
W25Q32FVxxIP
W25Q32FVxxIQ
W25Q32FVxxIF
Block Erase Time (64KB)
Chip Erase Time
t_BP1(4)
t_BP2(4)
tPP
tSE
tBE₁
tBE₂
tCE
30
50
µs
2.5
12
µs
0.7
3
ms
100
400
ms
45
120
1,600
ms
150
2,000
ms
10
50
s
Notes:
1.Clock high + Clock low must be less than or equal to 1/fC.
2.Value guaranteed by design and/or characterization, not 100% tested in production.
3.Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4.For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number
of bytes programmed.
5.It’s possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to ensure
reliable operation.
6.4-bytes address alignment for QPI/Quad Read
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