W987D6HBGX6E-TR Datasheet, PDF (8/68 Pages) Winbond – 128Mb Mobile LPSDR

W987D6HB / W987D2HB
6. ELECTRICAL CHARACTERISTICS
6.1 Absolute Maximum Ratings
PARAMETER
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Voltage on any pin relative to VSS
Operating Temperature
Storage Temperature
Short Circuit Output Current
Power Dissipation
128Mb Mobile LPSDR
SYMBOL
VDD
VDDQ
VIN, VOUT
Tc
TSTG
IOUT
PD
VALUES
MIN
MAX
−0.3
2.7
−0.3
2.7
−0.3
2.7
-25
85
-40
85
−55
150
±50
1.0
UNITS
V
V
V
°C
°C
mA
W
6.2 Operating Conditions
(Notes : 1)
PARAMETER
SYMBOL MIN. TYP
.
Supply Voltage
VDD
1.7
1.8
Supply Voltage (for I/O Buffer)
VDDQ
1.7
1.8
Input High level Voltage
Input Low level Voltage
VIH
0.8*VDDQ -
VIL
-0.3
-
LVCOMS Output H Level Voltage (IOUT = -0.1 mA )
VOH
0.9*VDDQ -
LVCMOS Output L Level Voltage (IOUT = +0.1 mA )
VOL
-
-
Input Leakage Current
(0V VIN VDD, all other pins not under test = 0V)
Output Leakage Current (Output disable , 0V VOUT
VDDQ)
II(L)
IO(L)
-1
-
-5
-
Note: VIH(max) = VDD/ VDDQ+1.2V for pulse width < 5 ns , VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 ns
MA X.
1.95
1.95
VDDQ + 0.3
+0.3
-
0.2
1
5
UNIT
V
V
V
V
V
V
A
A
6.3 Capacitance
(VDD = 1.7V~1.9V, f = 1 MHz, TA = 25°C)
PARAMETER
Input Capacitance : All other input-only
Input Capacitance (CLK)
Input/Output capacitance
Note: These parameters are periodically sampled and not 100% tested.
SYMBOL
CI
CCLK
CIO
MIN.
1.5
1.5
3.0
MAX.
3.0
3.5
5.0
UNIT
pf
pf
pf
-8-
Publication Release Date: Jun. 09, 2011
Revision A01-002