W987D6HBGX6E-TR Datasheet, PDF (4/68 Pages) Winbond – 128Mb Mobile LPSDR

W987D6HB / W987D2HB
128Mb Mobile LPSDR
1. GENERAL DESCRIPTION
The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells
fabricated with Winbond high performance process technology.
It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which
use batteries. It is available in two organizations: 1,048,576 words × 4 banks × 32 bits or 2,097,152 words × 4 banks × 16
bits. The device operates in a fully synchronous mode, and the output data are synchronized to positive edges of the
system clock and is capable of delivering data at clock rate up to 166MHz. The device supports special low power functions
such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR).
The Low Power SDRAM is suitable for 2.5G / 3G cellular phone, PDA, digital still camera, mobile game consoles and other
handheld applications where large memory density and low power consumption are required. The device operates from
1.8V power supply, and supports the 1.8V LVCMOS bus interface.
2. FEATURES
Power supply VDD = 1.7V~1.95V
VDDQ = 1.7V~1.95V
Frequency : 166MHz (-6) ,133MHz(-75)
Programmable Partial Array Self Refresh
Power Down Mode
Deep Power Down Mode (DPD)
Programmable output buffer driver strength
Automatic Temperature Compensated Self Refresh
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Refresh: 4K refresh cycle / 64ms
Interface: LVCMOS
Support package :
54 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended (-25°C ~ +85°C)
Industrial (-40°C ~ +85°C)
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Publication Release Date: Jun. 09, 2011
Revision A01-002