W9425G8EH Datasheet, PDF (43/53 Pages) Winbond – 8M × 4 BANKS × 8 BITS DDR SDRAM

11.10 Auto-precharge Timing (Write Cycle)
W9425G8EH
CLK
CLK
BL=2
CMD
WRITA
DQS
tDAL
AP
ACT
DQ
D0 D1
BL=4
CMD
WRITA
tDAL
AP
DQS
DQ
BL=8
CMD
WRITA
D0 D1 D2 D3
DQS
DQ
D0 D1 D2 D3 D4 D5 D6 D7
ACT
tDAL
AP
ACT
The Write with Auto-precharge command cannot be interrupted by any other command.
AP
Represents the start of internal precharging.
- 43 -
Publication Release Date: Jul. 04, 2008
Revision A01