W9425G8EH Datasheet, PDF (24/53 Pages) Winbond – 8M × 4 BANKS × 8 BITS DDR SDRAM

W9425G8EH
9.3 Capacitance
(VDD = VDDQ = 2.5V ±0.2V, f = 1 MHz, TA = 25 °C, VOUT (DC) = VDDQ/2, VOUT (Peak to Peak) = 0.2V)
SYMBOL
PARAMETER
MIN.
CIN
Input Capacitance (except for CLK pins)
2.0
CCLK Input Capacitance (CLK pins)
2.0
CI/O
DQ, DQS, DM Capacitance
4.0
CNC
NC Pin Capacitance
-
Notes: These parameters are periodically sampled and not 100% tested.
MAX.
3.0
3.0
5.0
1.5
DELTA
(MAX.)
0.5
0.25
0.5
-
UNIT
pF
pF
pF
pF
9.4 Leakage and Output Buffer Characteristics
SYMBOL
PARAMETER
Input Leakage Current
II (L)
(0V < VIN < VDDQ, All other pins not under test = 0V)
IO (L)
Output Leakage Current
(Output disabled, 0V < VOUT < VDDQ)
VOH
VOL
IOH (DC)
Output High Voltage
(under AC test load condition)
Output Low Voltage
(under AC test load condition)
Output Minimum Source DC Current
Full
Strength
IOL (DC) Output Minimum Sink DC Current
IOH (DC)
IOL (DC)
Output Minimum Source DC Current
Output Minimum Sink DC Current
Half
Strength
MIN.
-2
-5
VTT +0.76
-
-15.2
15.2
-10.4
10.4
MAX.
2
UNIT NOTES
µA
5
µA
-
V
VTT -0.76 V
-
mA
4, 6
-
mA
4, 6
-
mA
5
-
mA
5
- 24 -
Publication Release Date: Jul. 04, 2008
Revision A01