W9425G8EH Datasheet, PDF (29/53 Pages) Winbond – 8M × 4 BANKS × 8 BITS DDR SDRAM

W9425G8EH
CLK
VX
CLK
VICK
VSS
VID(AC)
0 V Differential
VISO
VSS
VX
VICK
VISO(min)
VX
VICK
VX
VICK
VX
VID(AC)
VISO(max)
(16) tAC and tDQSCK depend on the clock jitter. These timing are measured at stable clock.
(17) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
(18) tDAL = (tWR/tCK) + (tRP/tCK)
(19) For command/address input slew rate ≥1.0 V/nS.
(20) For command/address input slew rate ≥0.5 V/nS and <1.0 V/nS.
(21) For CLK & CLK slew rate ≥1.0 V/nS (single--ended).
(22) These parameters guarantee device timing, but they are not necessarily tested on each device. They may be
guaranteed by device design or tester correlation.
(23) Slew Rate is measured between VOH(ac) and VOL(ac).
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Publication Release Date: Jul. 04, 2008
Revision A01