W741E20X Datasheet, PDF (28/84 Pages) Winbond – 4-BIT FLASH MICROCONTROLLER

Preliminary W741E20X
EEPROM Program/Erase Description
The built-in program code memory of the W741E20X is the EEPROM structure. This memory can be
programmed, erased and verified through the VPP, MODE and DATA pins. The on board
program/erase connection is shown below.
XTAL
WHC4403
26 25
Xin Xout
24
Vdd
3
Mode
W741E202
1
Vss Vpp Data
JP9
5
4
2
Figure 15. The W741E202 Program/Erase Configuration
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Ground Potential
Applied Input/Output Voltage
Power Dissipation
Ambient Operating Temperature
Storage Temperature
RATING
-0.3 to +7.0
-0.3 to +7.0
120
0 to +70
-55 to +150
UNIT
V
V
mW
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
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