W9864G6IH Datasheet, PDF (15/43 Pages) Winbond – 1M × 4BANKS × 16BITS SDRAM

W9864G6IH
9.5 AC Characteristics and Operating Condition
(VDD =3V±0.3V for-5/-6, VDD = 2.7V-3.6V for -7/-7S on TA = 0 to 70°C)
(Notes: 5, 6)
PARAMETER
Ref/Active to Ref/Active
Command Period
Active to precharge
Command Period
Active to Read/Write
Command Delay Time
Read/Write(a) to Read/
Write(b) Command
Period
Precharge to Active(b)
Command Period
Active(a) to Active(b)
Command Period
Write Recovery Time
CL* = 2
CL* = 3
CLK Cycle Time
CL* = 2
CL* = 3
CLK High Level
CLK Low Level
Access Time from CLK
CL* = 2
CL* = 3
Output Data Hold Time
Output Data High
Impedance Time
Output Data Low
Impedance Time
Power Down Mode
Entry Time
Transition Time of CLK
(Rise and Fall)
Data-in-Set-up Time
Data-in Hold Time
Address Set-up Time
Address Hold Time
CKE Set-up Time
CKE Hold Time
Command Set-up Time
SYM.
tRC
tRAS
tRCD
tCCD
tRP
tRRD
tWR
tCK
tCH
tCL
tAC
tOH
tHZ
tLZ
tSB
tT
tDS
tDH
tAS
tAH
tCKS
tCKH
tCMS
MIN.
55
40
15
1
15
10
2
10
5
2
2
2
2
0
0
1.5
1
1.5
1
1.5
1
1.5
-5
MAX.
100000
1000
1000
－
4.5
5
5
1
-6
MIN. MAX.
60
42 100000
18
1
18
12
2
7.5
1000
6
1000
2
2
6
5
2
2
6
0
0
6
1
1.5
1
1.5
1
1.5
1
1.5
-7
MIN. MAX.
65
45 100000
20
1
20
14
2
10 1000
7
1000
2
2
6
5.5
2
2
7
0
0
7
1
1.5
1
1.5
1
1.5
1
1.5
-7S
MIN. MAX.
65
45 100000
20
1
18
14
2
10 1000
7
1000
2
2
6
5.5
2
2
7
0
0
7
1
1.5
1
1.5
1
1.5
1
1.5
UNIT NOTES
nS
tCK
nS
tCK
9
9
10
10
7
10
nS
9
9
9
9
9
9
9
Command Hold Time tCMH 1
1
1
9
1
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Publication Release Date:Mar. 31, 2008
Revision A05