W9864G6IH Datasheet, PDF (13/43 Pages) Winbond – 1M × 4BANKS × 16BITS SDRAM

W9864G6IH
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Input, Column Output Voltage
VIN, VOUT
-0.3 ~ VDD + 0.3
V
1
Power Supply Voltage
VDD, VDDQ
-0.3 ~ 4.6
V
1
Operating Temperature
TOPR
0 ~ 70
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
Soldering Temperature (10s)
TSOLDER
260
°C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliabilityof
the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -5/-6/-7/-7S)
PARAMETER
SYM. MIN.
Supply Voltage (Normal operation)
VDD 3.0
Supply voltage (for –7/-7S)
VDD 2.7
Supply Voltage for I/O Buffer
VDDQ 3.0
Supply Voltage for I/O Buffer (for -7/-7S) VDDQ 2.7
Input High Voltage
VIH
2.0
Input Low Voltage
VIL -0.3
Note: VIH(max) = VDD/ VDDQ+1.5V for pulse width < 5 nS
VIL(min) = VSS/ VSSQ-1.5V for pulse width < 5 nS
TYP.
3.3
-
3.3
-
-
-
MAX.
3.6
3.6
3.6
3.6
VDD + 0.3
0.8
UNIT
V
V
V
V
V
V
NOTES
2
2
2
2
2
2
9.3 Capacitance
(VDD =3V±0.3V for-5/-6, VDD = 2.7V-3.6V for -7/-7S , TA = 25 °C, f = 1 MHz)
PARAMETER
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , CKE)
Input Capacitance (CLK)
Input/Output Capacitance (DQ0−DQ15)
Input Capacitance DQM
Note: These parameters are periodically sampled and not 100% tested
SYM. MIN. MAX. UNIT
Ci1
2.5
4
pf
CCLK
2.5
4
pf
Co
4
6.5
pf
Ci2
3.0
5.5
pf
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Publication Release Date:Mar. 31, 2008
Revision A05