W9864G6IH Datasheet, PDF (14/43 Pages) Winbond – 1M × 4BANKS × 16BITS SDRAM

W9864G6IH
9.4 DC Characteristics
(VDD = 3V±0.3V for-5/-6 ,VDD = 2.7V-3.6V for -7/-7S on TA = 0 to 70°C)
PARAMETER
Operating Current
tCK = min., tRC = min.
Active precharge command
cycling without burst operation
Standby Current
tCK = min., CS = VIH
VIH/L = VIH (min.)/VIL (max.)
Bank: Inactive State
Standby Current
CLK = VIL, CS = VIH
VIH/L=VIH (min.)/VIL (max.)
Bank: Inactive State
No Operating Current
tCK = min., CS = VIH (min.)
Bank: Active State (4 Banks)
Burst Operating Current
(tCK = min.)
Read/Write command cycling
Auto Refresh Current
(tCK = min.)
Auto refresh command cycling
Self Refresh Current
Self refresh mode
(CKE = 0.2V)
1 Bank Operation
CKE = VIH
CKE = VIL
(Power Down
mode)
CKE = VIH
CKE = VIL
(Power Down
mode)
CKE = VIH
CKE = VIL
(Power Down
mode)
SYM.
IDD1
IDD2
IDD2P
IDD2S
IDD2PS
IDD3
IDD3P
IDD4
IDD5
IDD6
-5
MAX.
100
40
2
15
2
65
15
180
160
2
-6
MAX.
90
35
2
15
2
60
15
165
140
2
-7/-7S
MAX.
UNIT NOTES
80
3
30
3
2
3
15
2
mA
55
15
145
3, 4
120
3
2
PARAMETER
Input Leakage Current
(0V ≤ VIN ≤ VDD, all other pins not under test = 0V)
Output Leakage Current
(Output disable, 0V ≤ VOUT ≤ VDDQ)
LVTTL Output ^″H^″ Level Voltage
(IOUT = -2 mA)
LVTTL Output ^“L^″ Level Voltage
(IOUT = 2 mA)
SYMBOL
II(L)
lO(L)
VOH
VOL
MIN.
-5
-5
2.4
-
MAX.
5
5
-
0.4
UNIT NOTES
µA
µA
V
V
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Publication Release Date:Mar. 31, 2008
Revision A05