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| SIA814DJ Datasheet, PDF (9/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode | |||
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New Product
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
SiA814DJ
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2 0.1 0.02
0.05
Single Pulse
0.1
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68672.
Document Number: 68672
S-81176-Rev. A, 26-May-08
www.vishay.com
9
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