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SIA814DJ Datasheet, PDF (7/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode
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New Product
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
SiA814DJ
Vishay Siliconix
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 68672
S-81176-Rev. A, 26-May-08
www.vishay.com
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