SIA814DJ Datasheet, PDF (8/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

SiA814DJ
Vishay Siliconix
New Product
SCHOTTKY TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
10
10
1
10^-1
10^-2
10^-3
V_R = 30 V
V_R = 10 V
1
T_J = 150 °C
T_J = 25 °C
10^-4
10^-5
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
250
200
150
100
50
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
www.vishay.com
8
Document Number: 68672
S-81176-Rev. A, 26-May-08