SIA814DJ Datasheet, PDF (5/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

New Product
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
0.20
0.15
SiA814DJ
Vishay Siliconix
I_D = 3.3 A
10
0.10
T_J = 125 °C
T_J = 150 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 50 - 25
I_D = 250 µA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.05
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
100 µs
1
1 ms
10 ms
0.1
0.01
0.1
T_A = 25 °C
Single Pulse
1
BVDSS
Limited
10
100 ms
1 s, 10 s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68672
S-81176-Rev. A, 26-May-08
www.vishay.com
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