SIA814DJ Datasheet, PDF (2/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

SiA814DJ
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^{b, f}
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)^{b, g}
Maximum Junction-to-Case (Drain) (Schottky)
t≤5s
Steady State
t≤5s
Steady State
Symbol
R_thJA
R_thJC
R_thJA
R_thJC
Typical
52
12.5
62
15
Maximum
65
16
76
18.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
g. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
C_iss
C_oss
C_rss
Q_g
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 12 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 3.3 A
V_GS = 4.5 V, I_D = 3.1 A
V_GS = 2.5 V, I_D = 0.9 A
V_DS = 15 V, I_D = 3.3 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 4.3 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = 15 V, V_GS = 4.5 V, I_D = 4.3 A
f = 1 MHz
V_DD = 15 V, R_L = 4.3 Ω
I_D ≅ 3.5 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 15 V, R_L = 4.3 Ω
I_D ≅ 3.5 A, V_GEN = 10 V, R_g = 1 Ω
Min. Typ.
Max.
Unit
30
V
27
- 3.7
mV/°C
0.6
1.5
V
± 100
nA
1
µA
10
15
A
0.050 0.061
0.059 0.072
Ω
0.090 0.110
9
S
340
45
pF
25
7
11
3.2
5
nC
0.9
0.8
2
Ω
10
15
10
15
15
25
10
15
ns
5
10
12
20
15
25
10
15
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Document Number: 68672
S-81176-Rev. A, 26-May-08