SIA814DJ Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

New Product
SiA814DJ
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min. Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
T_C = 25 °C
I_S = 3.5 A, V_GS = 0 V
I_F = 3.5 A, dI/dt = 100 A/µs, T_J = 25 °C
4.5
A
15
0.8
1.2
V
12
20
ns
6
15
nC
8
ns
4
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
I_F = 0.5 A
V_F
I_F = 0.5 A, T_J = 125 °C
I_F = 1 A
Maximum Reverse Leakage Current
I_rm
I_F = 1 A, T_J = 125 °C
V_r = 30 V
V_r = 30 V, T_J = 85 °C
Junction Capacitance
C_T
V_r = 15 V
Min. Typ.
Max.
Unit
0.37
0.45
0.31
0.37
V
0.46
0.56
0.41
0.50
0.025
0.1
mA
0.6
6.00
35
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68672
S-81176-Rev. A, 26-May-08
www.vishay.com
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