SIA814DJ Datasheet, PDF (6/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

SiA814DJ
Vishay Siliconix
New Product
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10
8
8
6
6
Package Limited
4
4
2
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 68672
S-81176-Rev. A, 26-May-08