SIA814DJ Datasheet, PDF (4/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode

SiA814DJ
Vishay Siliconix
New Product
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
15
5
V_GS = 10 thru 3 V
12
4
9
3
6
3
0
0.0
0.155
V_GS = 2 V
V_GS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
1
0
0.0
500
T_C = 25 °C
T_C = 125 °C
0.5
1.0
1.5
T_C = - 55 °C
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.130
0.105
V_GS = 2.5 V
400
C_iss
300
0.080
0.055
V_GS = 4.5 V
V_GS = 10 V
0.030
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 4.3 A
8
V_DS = 15 V
V_DS = 24 V
6
4
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
200
100
C_oss
0 ^Crss
0
10
20
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 3.3 A
1.6
V_GS = 10 V, 4.5 V
1.4
1.2
V_GS = 2.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
Document Number: 68672
S-81176-Rev. A, 26-May-08