SI5509DC_08 Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si5509DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
PĆCHANNEL
100.00
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
10.00
1.00
T_A = 125 _C
I_D = 3.9 A
0.2
0.10
0.01
T_A = 25 _C
T_A = 125 _C
0.1
T_A = 25 _C
0.00
0.0
0.4
0.8
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
1.2
0.0
1
50
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
1.1
40
1.0
30
0.9
I_D = 250 mA
20
0.8
10
0.7
0.6
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
10^–4 10^–3
Safe Operating Area, Junction-to-Case
100
10^–2 10^–1
1
Time (sec)
10 100 600
10
Limited by r_DS(on)
1
0.1
10 ms
100 ms
1s
10 s
dc
0.01
T_A = 25 _C
Single Pulse
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
0.001
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
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