SI5509DC_08 Datasheet, PDF (3/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si5509DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Dynamic^a
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Drain-Source Body Diode Characteristics
N-Channel
V_DD = 10 V, R_L =2.5 W
I_D ^ 4.0 A, V_GEN = 4.5 V, R_g = 1 W
P-Channel
V_DD = –10 V, R_L = 3.2 W
I_D ^ –3.14 A, V_GEN = –4.5 V, R_g = 1 W
Continuous Source-Drain Diode Current
I_S
T_C = 25 _C
Pulse Diode Forward Current^a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I_SM
I_S = 2.4 A, V_GS = 0 V
V_SD
I_S = –1.5 A, V_GS = 0 V
t_rr
Q_rr
N-Channel
I_F = 2.4 A, di/dt = 100 A/ms, T_J = 25 _C
P-Channel
t_a
I_F = –1.5 A, di/dt = –100 A/ms, T_J = 25 _C
t_b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ^a Max Unit
6
9
8
12
95
143
75
113
ns
12
18
25
38
6
9
60
90
3.75
–3.75
A
10
–15
0.8
1.2
V
–0.8
–1.2
12
18
ns
18
27
5
8
nC
8
12
7.5
14
ns
4.5
4
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
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